Author:
Fraboni B.,Gasparotto A.,Cesca T.,Verna A.,Impellizzeri G.,Priolo F.
Subject
Physics and Astronomy (miscellaneous)
Reference12 articles.
1. S. G. Bishop, in Deep Centers in Semiconductors, edited by S. Pantelides (Gordon and Breach, New York, 1986), p. 541.
2. Quantitative study of the contribution of deep and shallow levels to the compensation mechanisms in annealed InP
3. Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production
4. High-resistance buried layers by MeV Fe implantation in n-type InP
5. T. Cesca, A. Gasparotto, F. Priolo, E. C. Moreira, B. Fraboni, and G. Scamarcio, in Proceedings of the Ion Implantation Technology Conference, Taos, New Mexico (2002), pp. 653–656.
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