Border trap reduction in Al2O3/InGaAs gate stacks-Reference-Cited by-同舟云学术

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Border trap reduction in Al2O3/InGaAs gate stacks

Published:2015-11-16 Issue:20 Volume:107 Page:202102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tang Kechao¹,Winter Roy²,Zhang Liangliang³,Droopad Ravi⁴,Eizenberg Moshe²,McIntyre Paul C.¹

Affiliation:

1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

2. Department of Materials Science and Engineering, Technion—Israel Institute of Technology, Haifa 32000, Israel

3. Department of Electrical Engineering, Stanford University, Stanford, California 9430, USA

4. Department of Physics, Texas State University, San Marcos, Texas 78666, USA

Funder

Stanford Initiative in Nanoscale Materials and Processes

Stanford Nano Shared Facilities

US-Israel Binational Science Foundation

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936100

Reference18 articles.

1. High-Performance Inverted $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD

2. Nanometre-scale electronics with III–V compound semiconductors

3. High-κ gate dielectrics: Current status and materials properties considerations

4. 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

5. InGaAs surface preparation for atomic layer deposition by hydrogen cleaning and improvement with high temperature anneal

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1. Layer‐Engineered Functional Multilayer Thin‐Film Structures and Interfaces through Atomic and Molecular Layer Deposition;Advanced Materials Interfaces;2024-06-28

2. Hydrogen passivation of oxygen vacancies in LaAlO3;Current Applied Physics;2022-07

3. In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures;Applied Physics Letters;2021-06-21

4. Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate;Materials;2021-06-16

5. Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress;Nanomaterials;2020-03-15

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