A model of the Temkin isotherm behavior for hydrogen adsorption at Pd–SiO2 interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366158
Reference15 articles.
1. A hydrogen−sensitive MOS field−effect transistor
2. A hydrogen‐sensitive Pd‐gate MOS transistor
3. Physics with catalytic metal gate chemical sensors
4. Kinetic modeling of hydrogen adsorption/absorption in thin films on hydrogen‐sensitive field‐effect devices: Observation of large hydrogen‐induced dipoles at the Pd‐SiO2interface
5. A hydrogen sensitive Pd-MOS structure working over a wide pressure range
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