Electronic structure and work function of metal gate Mo–W system-Reference-Cited by-同舟云学术

Electronic structure and work function of metal gate Mo–W system

Published:2007-08-27 Issue:9 Volume:91 Page:092106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gong H. R.,Cho Kyeongjae

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2776851

Reference17 articles.

1. Dual work function metal gate CMOS technology using metal interdiffusion

2. Continuous and Precise Work Function Adjustment for Integratable Dual Metal Gate CMOS Technology Using Hf–Mo Binary Alloys

3. F. R. deBoer, R. Boom, W. C. M. Mattens, A. R. Miedema, and A. K. Niessen, Cohesion in Metals: Transition Metal Alloys (North-Holland, Amsterdam, 1989), Vol. 1, p. 386.

4. The work function of the elements and its periodicity

5. Electrical and microstructural characterization of molybdenum tungsten electrodes using a combinatorial thin film sputtering technique

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