Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3040306
Reference19 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. High dielectric constant gate oxides for metal oxide Si transistors
3. Vacancy and interstitial defects in hafnia
4. Defect energy levels in HfO2 high-dielectric-constant gate oxide
5. First-principles study of native point defects in hafnia and zirconia
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