Low‐temperature annealing behavior of Se‐implanted GaAs studied by high resolution Rutherford backscattering channeling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330681
Reference3 articles.
1. Reordering of implanted amorphous layers in gaas
2. Low‐temperature epitaxial regrowth of ion‐implanted amorphous GaAs
3. Ion implantation and low‐temperature epitaxial regrowth of GaAs
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. RBS-channeling and TEM studies on the regrowth of low temperature argon ion amorphized lithium tantalate (LiTaO3) single crystal;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-03
2. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
3. The effect of nonstoichiometry and polarity of the (111) plane on microtwin formation in ion‐implanted GaAs;Journal of Applied Physics;1988-08
4. High resolution structural characterization of the amorphous‐crystalline interface in Se+‐implanted GaAs;Applied Physics Letters;1984-05
5. Oxygen implantation in GaAs: Damage studies;Physica Status Solidi (a);1983-07-16
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