Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film: Influence of the sol-gel process and the substrate-Reference-Cited by-同舟云学术

Correlation between structure, microstructure, and ferroelectric properties of PbZr0.2Ti0.8O3 integrated film: Influence of the sol-gel process and the substrate

Published:1998-10 Issue:7 Volume:84 Page:3815-3826
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Floquet Nicole,Hector Jérôme,Gaucher Philippe

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.368560

Reference23 articles.

1. 256Kb Ferroelectric nonvolatile memory technology for 1T/1C cell with 100ns read/write time at 3V

2. Ferroelectric materials for thermal IR detectors

3. Deposition of Ba1−xSrxTiO3 and SrTiO3 via liquid source CVD (LSCVD) for ULSI DRAMS

4. Applications of Nonlinear Optical Thin Films

5. Smart Electroceramics

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