Moving species during ion mixing in GexSi1−x/metal systems
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345608
Reference10 articles.
1. Temperature dependence of atomic transport in ion mixing
2. On the temperature dependence and the moving species during ion mixing
3. Transition‐metal silicides formed by ion mixing and by thermal annealing: Which species moves?
4. Ion beam mixing: Basic experiments
5. Three-dimensional distributions of ion range and damage including recoil transport
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Ion beam mixing in metallic and semiconductor materials;Materials Science and Engineering: R: Reports;1994-05
2. Hindered transformation of Pd2Ge to PdGe in the Pd/a‐Ge:H system;Journal of Applied Physics;1993-06-15
3. Compound formation at the interaction of Pd with strained layers of Si1−xGexepitaxially grown on Si(100);Applied Physics Letters;1991-08-05
4. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography;Advances in Physics;1990-04
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