On the temperature dependence and the moving species during ion mixing
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
1. Ph.D. Thesis;Tsaur,1980
2. A comparison between thermal annealing and ion mixing of alloyed Ni‐W films on Si. I
3. A comparison between thermal annealing and ion mixing of multilayered Ni‐W films on Si. II
4. Ion mixing of Ni–Pt films on Si
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2. Concentration profiles during films deposition from a low-energy ion beam;Russian Physics Journal;2007-03
3. Atomic transport in Cu/Ge and Co/Ge systems during ion-beam mixing;Thin Solid Films;1998-11
4. RBS studies of the lattice damage caused by 1 Me V Si+ implantation into Al0.3Ga0.7As/GaAs superlattices at elevated temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-05
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