A comparison between thermal annealing and ion mixing of alloyed Ni‐W films on Si. I
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335549
Reference7 articles.
1. Ion-induced silicide formation in niobium thin films
2. A comparison between thermal annealing and ion mixing of multilayered Ni‐W films on Si. II
3. Reaction of amorphous Ni‐W and Ni‐N‐W films with substrate silicon
4. Formation of shallow silicide contacts of high Schottky barrier on Si: Alloying Pd and Pt with W versus alloying Pd and Pt with Si
5. Phase separation in alloy‐Si interaction
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2. The role of composition and microstructure in Ni–W silicide formation and low temperature epitaxial NiSi2 growth by premixing Si;Journal of Physics D: Applied Physics;2017-01-12
3. Enhanced solid solution effects on the strength of nanocrystalline alloys;Acta Materialia;2011-02
4. Compound Phase Formation in Thin Film Structures;Critical Reviews in Solid State and Materials Sciences;1999-03
5. Silicide formation by concentration controlled phase selection;Journal of Applied Physics;1997-03
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