Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
Author:
Affiliation:
1. Institut für Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Sommerfeldstraße 24, D-52074 Aachen, Germany
2. Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Funder
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4940370
Reference34 articles.
1. Ferroelectricity in hafnium oxide thin films
2. Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
3. Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1−x O 2 films
4. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
5. Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability
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