n-type delta doped strained quantum well lasers for improved modulation bandwidth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118692
Reference14 articles.
1. Nonlinear gain suppression in semiconductor lasers due to carrier heating
2. Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation
3. On carrier injection and gain dynamics in quantum well lasers
4. High speed quantum-well lasers and carrier transport effects
5. Effects of strain on the high speed modulation of GaAs- and InP-based quantum-well lasers
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1. Carrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier;Physical Review B;2018-09-14
2. Theoretical Modeling for Optical Properties of a Si Delta-Doped InGaN/GaN Quantum Well;CHINESE J PHYS;2014
3. Carrier Dynamics in Tunneling Injection Quantum Dot Lasers;IEEE Journal of Quantum Electronics;2010-11
4. Si delta doping in a GaN barrier layer of InGaN∕GaN multiquantum well for an efficient ultraviolet light-emitting diode;Journal of Applied Physics;2005-05-15
5. n-type delta-doped strained quantum well lasers for improved temperature-dependent performance;Applied Physics Letters;1998-03-23
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