Helium-implanted silicon: A study of bubble precursors-Reference-Cited by-同舟云学术

Helium-implanted silicon: A study of bubble precursors

Published:1999-02 Issue:3 Volume:85 Page:1401-1408
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Corni F.,Calzolari G.,Frabboni S.,Nobili C.,Ottaviani G.,Tonini R.,Cerofolini G. F.,Leone D.,Servidori M.,Brusa R. S.,Karwasz G. P.,Tiengo N.,Zecca A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.369335

Reference27 articles.

1. Relative free energies of Si surfaces

2. Equilibrium shape of Si

3. Electrical properties of He-implantation-produced nanocavities in silicon

4. Hydrogen interactions with cavities in helium-implanted silicon

5. Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion Implantation

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