Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal
Author:
Affiliation:
1. Department of Electronics Engineering, National Chiao Tung University, 1001 Ta-Hsueh Rd., Hsin-Chu 300, Taiwan
2. National Nano Device Laboratories, 26 Prosperity Rd. I, Hsinchu Science Park, Hsin-Chu 300, Taiwan
Funder
National Science Council of Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4931133
Reference20 articles.
1. Diffusion and activation of n-type dopants in germanium
2. Fermi-level pinning and charge neutrality level in germanium
3. Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation
4. Ohmic contact formation on n-type Ge
5. Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
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1. Monte Carlo Study of Si, Ge, and In0.53Ga0.47As n-Channel FinFET Scaling: Channel Orientation, Quantum Confinement, Doping, and Contacts;IEEE Nanotechnology Magazine;2020-12
2. Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects;IEEE Journal of the Electron Devices Society;2020
3. Enabling Low Contact Resistivity on n-Ge by Implantation After Ti Germanide;IEEE Electron Device Letters;2018-01
4. Advanced contact technology;CMOS Past, Present and Future;2018
5. Erratum: “Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal” [Appl. Phys. Lett. 107, 113503 (2015)];Applied Physics Letters;2015-12-07
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