Self‐consistent analysis of electric field‐dependent intersubband transitions for a thin layer inserted quantum well
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352788
Reference17 articles.
1. High‐detectivityD*=1.0×1010cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector
2. GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings
3. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
4. Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides
5. Intersubband transitions in GaAs‐AlxGa1−xAs modulation‐doped superlattices
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