Polarity dependence of hexagonal GaN films on two opposite c faces of Al2O3 substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1380731
Reference12 articles.
1. Substrate‐polarity dependence of metal‐organic vapor‐phase epitaxy‐grown GaN on SiC
2. Deposition and surface characterization of high quality single crystal GaN layers
3. Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
4. Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
5. Polarity determination of GaN films by ion channeling and convergent beam electron diffraction
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2. Effects of AlN buffer layers on the structural and the optical properties of GaN epilayers grown on Al2O3 substrates by using plasma-assisted molecular beam epitaxy;Journal of the Korean Physical Society;2014-04
3. Growth, Characterization, and Polarity Identification of (0001) Zn[sub 1−x]Mg[sub x]O Epitaxial Films on Lattice-Matched β-LiGaO[sub 2] (001) Substrates;Journal of The Electrochemical Society;2011
4. Evidences dominating the formation of ZnO nanostructures via in-situ study in an environmental scanning electron microscope;Applied Physics A;2008-05-23
5. Electron holography determination of the growth polarity of GaN/AlGaN multi-quantum well structure;Acta Physica Sinica;2006
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