Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells-Reference-Cited by-同舟云学术

Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells

Published:1992-12 Issue:11 Volume:72 Page:5288-5293
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kobayashi H.,Ishida T.,Nakamura K.,Nakato Y.,Tsubomura H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.352013

Reference18 articles.

1. Efficient electron‐beam‐deposited ITO/n‐Si solar cells

2. Efficient sprayed In2O3 : Snn‐type silicon heterojunction solar cell

3. Spray-deposited ITO—Silicon SIS heterojunction solar cells

4. Mechanism of carrier transport in highly efficient solar cells having indium tin oxide/Si junctions

5. Optical and Photovoltaic Characteristics of In‐Modified SnO2 Thin Films

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