Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiOx/Poly-Si Passivating Contacts-Reference-Cited by-同舟云学术

Realizing the Potential of RF-Sputtered Hydrogenated Fluorine-Doped Indium Oxide as an Electrode Material for Ultrathin SiOx/Poly-Si Passivating Contacts

Published:2020-08-12 Issue:9 Volume:3 Page:8606-8618
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Han Can¹²^ORCID,Yang Guangtao¹,Montes Ana¹³,Procel Paul¹,Mazzarella Luana¹,Zhao Yifeng¹,Eijt Stephan⁴,Schut Henk⁴,Zhang Xiaodan⁵^ORCID,Zeman Miro¹,Isabella Olindo¹

Affiliation:

1. Photovoltaic Materials and Devices group, Delft University of Technology, Delft 2628 CD, The Netherlands

2. Shenzhen Institute of Wide-bandgap Semiconductors, Shenzhen 518055, China

3. Faculty of Sciences of University of Lisbon, Lisbon 1749-06, Portugal

4. Department of Radiation Science and Technology, Faculty of Applied Sciences, Delft University of Technology, Delft 2629 JB, The Netherlands

5. Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300350, China

Funder

Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

http://pubs.acs.org/doi/pdf/10.1021/acsaem.0c01206

Reference70 articles.

1. Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies

2. Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

3. Passivating contacts for crystalline silicon solar cells

4. Implementing transparent conducting oxides by DC sputtering on ultrathin SiOx / poly-Si passivating contacts

5. Implantation‐based passivating contacts for crystalline silicon front/rear contacted solar cells

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