Dual arsenic and boron ion implantation in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356659
Reference12 articles.
1. Interference of arsenic diffusion by argon implantation
2. Effect of argon implantation on the activation of boron implanted in silicon
3. Quantum‐chemical modeling of boron and noble gas dopants in silicon
4. Interstitial Interactions: Arsenic‐Aluminum, Phosphorus‐Aluminum Push Effect
5. Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor
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2. Boron diffusion in extrinsically doped crystalline silicon;Physical Review B;2010-01-29
3. Dopants;Computational Microelectronics;2004
4. Redistribution of implanted impurities in dual As+ and B+ implanted silicon during annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05
5. Reliability of shallow n+-type layers formed in dual As and B implanted silicon by rapid thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-01
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