Modulating saturation magnetization and topological Hall resistivity of flexible ferrimagnetic Mn4N films by bending strains

Abstract

The ferrimagnetic rare-earth-free Mn4N films are considered as a good candidate in spintronics due to its low saturation magnetization ( MS) and high Néel temperature. Here, Mn4N films are directly deposited on flexible mica to investigate strain-related magnetic and electronic transport properties. The MS variation of 11.0 nm Mn4N film reaches 453% at tensile strain of radius of curvature (ROC) = 2 mm. Bending strains cannot affect anomalous Hall resistivity and magnetoresistance. However, the topological Hall resistivity of 147.0 nm Mn4N film increases by 58% at tensile strain of ROC = 5 mm due to frustrated exchange interactions. The flexible Mn4N films have great potential applications in flexible magnetic sensor and strain gauge due to strain modulated MS, resistance, and stable magnetoresistance.