Modulating Exchange Bias, Anisotropic Magnetoresistance, and Planar Hall Resistance of Flexible Co/MnN Epitaxial Bilayers on Mica by Bending Strain-Reference-Cited by-同舟云学术

Modulating Exchange Bias, Anisotropic Magnetoresistance, and Planar Hall Resistance of Flexible Co/MnN Epitaxial Bilayers on Mica by Bending Strain

Published:2023-01-19 Issue:4 Volume:15 Page:6209-6216
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chen Zuolun¹,Liu Xiang²,Jiang Jiawei¹,Li Rui¹,Wang Yue¹,Guo Liu¹,Xu Yingdan¹,Mi Wenbo¹^ORCID

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin300354, China

2. College of Science, Civil Aviation University of China, Tianjin300300, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c21780

Reference45 articles.

1. Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect

2. Mechanical Strain-Tunable Microwave Magnetism in Flexible CuFe2O4Epitaxial Thin Film for Wearable Sensors

3. CoFeB/MgO-based magnetic tunnel junction directly formed on a flexible substrate

4. High Performance MgO-barrier Magnetic Tunnel Junctions for Flexible and Wearable Spintronic Applications

5. Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon

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