Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362721
Reference7 articles.
1. Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers
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3. Spontaneous emission and gain in GaAlAs quantum well lasers
4. Gain, refractive index, linewidth enhancement factor from spontaneous emission of strained GaInP quantum-well lasers
5. Improved performance from pseudomorphic InyGa/sub 1-y/As-GaAs MQW lasers with low growth temperature AlxGa/sub 1-x/As short-period superlattice cladding
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1. Optical gain and threshold current density for mid-infrared GaSbBi/GaSb quantum-well laser structure;Materials Science and Engineering: B;2021-04
2. Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure;AIP Advances;2017-08
3. Paving the way for solution- processable perovskite lasers;physica status solidi (c);2016-09-21
4. GaAs-Based Transverse Junction Superluminescent Diodes With Strain-Compensated InGaAs–GaAsP Multiple-Quantum-Wells at 1.1-$\mu$m Wavelength;IEEE Photonics Technology Letters;2010-06
5. GaAs-based Transverse Junction Superluminescent Diode at 1.1um Wavelength Region;Conference on Lasers and Electro-Optics/International Quantum Electronics Conference;2009
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