Phosphorus‐vacancy‐related deep levels in GaInP layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.358911
Reference23 articles.
1. A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
2. Npn and pnp GaInP/GaAs heterojunction bipolar transistors grown by MOCVD
3. Defects in organometallic vapor‐phase epitaxy‐grown GaInP layers
4. Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor‐phase epitaxy
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