Alpha particle detection based on a NiO/β-Ga2O3 heterojunction diode

Author:

Zhou Leidang1ORCID,Chen Hao1ORCID,Deng Yuxin2ORCID,Zhang Silong34ORCID,Chen Liang3,Lu Xing2,Ouyang Xiaoping3ORCID

Affiliation:

1. School of Microelectronics, Xi'an Jiaotong University 1 , Xi'an 710049, People's Republic of China

2. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University 2 , Guangzhou 510275, People's Republic of China

3. Radiation Detection Research Center, Northwest Institute of Nuclear Technology 3 , Xi'an 710024, People's Republic of China

4. School of Materials Science and Engineering, Xiangtan University 4 , Xiangtan 411100, People's Republic of China

Abstract

Alpha particle detection has been achieved using a NiO/β-Ga2O3 heterojunction diode (HJD) detector, demonstrating the great potential of β-Ga2O3 devices for ionizing particle detection. Featuring a large area (700 × 700 μm2) and a low reverse leakage current (10−10 A), the HJD detector exhibited apparent energy spectra of 239Pu-generated alpha particles with an energy of 5.155 MeV at various bias voltages from −20 to −150 V. The peak energy of the energy spectra increased with the bias voltages. In contrast, the full width at half-maximum of the spectra was almost unchanged at high bias voltages, leading to an increased energy resolution with the increase in the bias voltages. The detector's charge collection efficiency (CCE) and energy resolution reached 14.82% and 17.54% at −150 V, respectively. The compromised CCE and energy resolution were revealed to be limited by the insufficient depletion width of the NiO/β-Ga2O3 HJD.

Funder

National Natural Science Foundation of China

Guangdong basic and Applied basic Research Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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