Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100787
Reference13 articles.
1. Infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxy
2. Characteristics ofp‐njunctions fabricated on Hg1−xCdxTe epilayers grown by molecular beam epitaxy
3. Long and middle wavelength infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular‐beam epitaxy
4. Molecular beam epitaxial growth and characterization of 2‐in.‐diam Hg1−xCdxTe films on GaAs (100) substrates
5. MBE p-type Hg1-xCdxTe grown on the (110) orientation
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2. The Surface Kinetics of MBE-Grown CdTe (211)B During In Situ Cyclic Annealing;Journal of Electronic Materials;2013-10-08
3. Analysis of Mesa Dislocation Gettering in HgCdTe/CdTe/Si(211) by Scanning Transmission Electron Microscopy;Journal of Electronic Materials;2013-08-14
4. Measurement of Minority Carrier Lifetime in n-Type MBE HgCdTe on Variable Substrates;Journal of Electronic Materials;2012-04-25
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