Crystal growth and flat-band effects on thermoelectric properties of Fe2TiAl-based full-Heusler thin films
Author:
Affiliation:
1. Center for Exploratory Research, Research and Development Group, Hitachi, Ltd., 1-280, Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0023660
Reference31 articles.
1. Complex thermoelectric materials
2. High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys
3. Thin-film thermoelectric devices with high room-temperature figures of merit
4. Effect of off-stoichiometry on the transport properties of the Heusler-typeFe2VAlcompound
5. Doping effects on thermoelectric properties of the off-stoichiometric Heusler compounds Fe2−xV1+xAl
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3. Thermoelectric properties of composition-controlled Fe2TiSi-based full-Heusler thin films;Applied Physics Express;2022-07-20
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