On the contribution of vacancy complexes to the saturation of the carrier concentration in zinc doped InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363188
Reference24 articles.
1. Bulk and surface effects of heat treatment ofp‐type InP crystals
2. Interstitial and substitutional Zn in InP and InGaAsP
3. The characterization of highly‐zinc‐doped InP crystals
4. Determination of substitutional dopant and hole concentrations in Zn‐diffused single‐crystal InP
5. The effect of zn on inp surfaces during diffusion
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