Determination of substitutional dopant and hole concentrations in Zn‐diffused single‐crystal InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91642
Reference13 articles.
1. The solid solubility limits of zinc in GaAs at 1000
2. Electrical measurements on homogeneous diffused p-type InP
3. The electrical properties of zinc diffused indium phosphide
4. The characterization of highly‐zinc‐doped InP crystals
5. Quantitative analysis of complex targets by proton‐induced x rays
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1. Thin-Film Solar Cells with InP Absorber Layers Directly Grown on Nonepitaxial Metal Substrates;Advanced Energy Materials;2015-08-25
2. Application of the point-defect analysis technique to zinc doping of MOCVD indium phosphide;Semiconductor Science and Technology;2003-07-01
3. Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy;Journal of Applied Physics;1998-10-15
4. Structural properties of Zn-diffused InP layers;Journal of Applied Physics;1997-12
5. Structural characterization of Zn‐diffused InP layers by x‐ray diffraction and standing‐waves method;Applied Physics Letters;1996-11-11
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