Anion inclusions in III‐V semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94219
Reference12 articles.
1. Surface stoichiometry and structure of GaAs
2. Leed, aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (1̄1̄1̄)B surfaces and their behaviour upon cs adsorption
3. Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxy
4. Arsenic precipitation at dislocations in GaAs substrate material
5. Segregation of As on GaAs(110) surfaces observed immediately after cleavage
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1. Self-diffusion in polycrystalline InSb films;Semiconductor Science and Technology;1994-11-02
2. Comparative study of the oxide growth mode on GaAs(111) and (1̄1̄1̄) surfaces: Implications for direct oxide electron beam writing;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1991-05
3. Annealing behavior of strain‐induced anion antisites in semi‐insulating GaAs;Journal of Applied Physics;1989-09-15
4. X-ray investigations of GaP:N,S epitaxial layers applied in light emitting diodes;Journal of Crystal Growth;1989-05
5. Temperature dependence of the lattice constant in doped and nonstoichiometric GaAs, GaAs1−xPx, and GaP;Physica Status Solidi (a);1988-04-16
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