InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion-Reference-Cited by-同舟云学术

InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

Published:2018-02-28 Issue:8 Volume:123 Page:085111
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim T. W.¹,Albert B. R.²,Kimerling L. C.¹²,Michel J.¹²

Affiliation:

1. Materials Processing Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA

2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA

Funder

DOE | Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5018082

Reference15 articles.

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4. Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

5. Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

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