The influence of ammonia on rapid‐thermal low‐pressure metalorganic chemical vapor deposited TiNxfilms from tetrakis (dimethylamido) titanium precursor onto InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351271
Reference15 articles.
1. Properties of titanium nitride thin films deposited by rapid‐thermal‐low‐pressure‐metalorganic‐chemical‐vapor‐deposition technique using tetrakis (dimethylamido) titanium precursor
2. Novel self‐aligned W/TiN/TiSi2contact structure for very shallow junctions and interconnections
3. Reactive sputtering of TiN films at large substrate to target distances
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1. Towards a comprehensive understanding of the chemical vapor deposition of titanium nitride using Ti(NMe2)4: a density functional theory approach;Dalton Transactions;2014
2. Effect of NH3 on the preparation of TiNx films by laser CVD using tetrakis-diethylamido-titanium;Journal of Alloys and Compounds;2009-10
3. The Reaction of Tetrakis(dimethylamido)titanium with Self-Assembled Alkyltrichlorosilane Monolayers Possessing −OH, −NH2, and −CH3 Terminal Groups;Journal of the American Chemical Society;2005-04-06
4. Formation of Titanium Nitride Nanoparticles within Mesoporous Silica SBA-15;The Journal of Physical Chemistry B;2005-02-18
5. Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH3;Thin Solid Films;2003-07
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