Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots
Author:
Affiliation:
1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
2. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4934695
Reference24 articles.
1. High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation
2. The Intermediate Band Solar Cell: Progress Toward the Realization of an Attractive Concept
3. Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells
4. Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots
5. Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence
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