Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4717766
Reference19 articles.
1. Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
2. Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells
3. Effect of strain compensation on quantum dot enhanced GaAs solar cells
4. Strain-balanced GaAsP/InGaAs quantum well solar cells
5. Electronic structure of self-assembled InAs quantum dots in GaAs matrix
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2. Opto-electronic transport properties of resonant tunneling diodes with type-I and II postwells;Applied Physics Letters;2023-09-25
3. Improved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition;Heliyon;2023-09
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