Electrical type conversion of p-type HgCdTe induced by nanoimprinting-Reference-Cited by-同舟云学术

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Electrical type conversion of p-type HgCdTe induced by nanoimprinting

Published:2011-05 Issue:9 Volume:109 Page:096102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Martyniuk M.,Sewell R. H.,Westerhout R.,Umana-Membreno G. A.,Musca C. A.,Dell J. M.,Antoszewski J.,Faraone L.,Macintyre D. S.,Thoms S.,Ironside C. N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3582062

Reference21 articles.

1. HgCdTe infrared detector material: history, status and outlook

2. Parameter determination from resistance-voltage curve for long-wavelength HgCdTe photodiode

3. “Blueshift” in photoluminescence and photovoltaic spectroscopy of the ion-milling formed n-on-p HgCdTe photodiodes

4. Summary of HgCdTe 2D array technology in the U.K.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors;Science China Physics, Mechanics & Astronomy;2014-12-18

2. Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe;Journal of Electronic Materials;2013-07-11

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