Impact ionization avalanche breakdown in short crystal regions ofp‐Ge
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345419
Reference10 articles.
1. Nonlinear and chaotic transport phenomena in semiconductors
2. Classification of current instabilities during low-temperature breakdown in germanium
3. Spontaneous resistance oscillations inp-germanium at low temperatures and their spatial correlation
4. Spatial and Temporal Current Instabilities in Germanium
5. Spatio-temporal instabilities in the electric breakdown of p-germanium
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1. Circuit-limited oscillations at the onset of impurity breakdown in ultrapure p-Ge with an S-shaped current-field characteristic;Solid-State Electronics;2006-11
2. Current filaments in the impact ionization breakdown of p-Germanium forced by geometric boundary conditions;Zeitschrift für Physik B Condensed Matter;1997-12
3. Spatial aspects connected with the nucleation process of current filamentation inp-type germanium;Physical Review B;1996-11-15
4. Wave instability in semiconductors without negative differential conductivity;Physical Review B;1994-06-15
5. Type-I intermittency in semiconductor breakdown: An experimental confirmation;Physical Review B;1994-04-01
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