Circuit-limited oscillations at the onset of impurity breakdown in ultrapure p-Ge with an S-shaped current-field characteristic-Reference-Cited by-同舟云学术

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Circuit-limited oscillations at the onset of impurity breakdown in ultrapure p-Ge with an S-shaped current-field characteristic

Published:2006-11 Issue:11-12 Volume:50 Page:1710-1715
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ho Ching-Hong,Shiau Yuo-Hsien

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Nonlinear Oscillations and Chaos in Electrical Breakdown in Ge

2. Nonequilibrium phase transitions in semiconductors;Schöll,1987

3. Encounter with chaos;Peinke,1992

4. Nonlinear spatio-temporal dynamics and chaos in semiconductors;Schöll,2001

5. Nucleation and growth of current filaments in semiconductors

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