Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120262
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1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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4. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates
5. High transconductance-normally-off GaN MODFETs
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