Structure and properties of tin-doped indium oxide thin films prepared by reactive electron-beam evaporation with a zone-confining arrangement-Reference-Cited by-同舟云学术

Structure and properties of tin-doped indium oxide thin films prepared by reactive electron-beam evaporation with a zone-confining arrangement

Published:1996 Issue:8 Volume:79 Page:4057
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Rauf I. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference22 articles.

1. Transparent conductors—A status review

2. I. A. Rauf, inProceedings of the 12th International Congress for Electron Microscopy, Seattle, WA, edited by L. D. Peachey and D. B. Williams (San Francisco Press, San Francisco, 1990), Vol. 4, p. 716.

3. A novel method for preparing thin films with selective doping in a single evaporation step

4. Low resistivity and high mobility tin-doped indium oxide films

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