Heteroepitaxial growth of ZnSe on (111) Si by low‐pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341292
Reference9 articles.
1. Organometallic vapor deposition of epitaxial ZnSe films on GaAs substrates
2. Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour deposition
3. Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor Deposition
4. High-Quality ZnSe Film Growth by 0.1-atm MOVPE under the Diethylzinc Diffusion-Limited Condition
5. Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVD
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1. Fabrication of n-ZnSe/p-Si/n-Si heterojunction phototransistor using IR furnace chemical vapour deposition and its optical properties analysis;IEE Proceedings - Optoelectronics;2000-04-01
2. Comparison of the photocurrent of ZnSe/InSe/Si and ZnSe/Si heterojunctions;Materials Science and Engineering: B;1998-10
3. Optical and hybrid properties of the ZnSe/InSe/Si heterojunction;Solid State Communications;1998-06
4. Fabrication of ZnSe/Si P–I–N photodiode by IR furnace chemical vapor deposition;Solid-State Electronics;1998-05
5. Heteroepitaxy of ZnSe on Si by Low‐Pressure Organometallic Chemical Vapor Deposition;Journal of The Electrochemical Society;1991-10-01
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