High-Quality ZnSe Film Growth by 0.1-atm MOVPE under the Diethylzinc Diffusion-Limited Condition-Reference-Cited by-同舟云学术

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High-Quality ZnSe Film Growth by 0.1-atm MOVPE under the Diethylzinc Diffusion-Limited Condition

Published:1987-08-20 Issue:Part 1, No. 8 Volume:26 Page:1305-1309
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shibata Noriyoshi,Ohki Akira,Zembutsu Sakae

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAlN and II-VI Systems for Blue-Green Light-Emitting Devices;Advanced Materials;1996-06

2. Blue Light Emitting Diode;Japanese Journal of Applied Physics;1995-07-15

3. Nitrogen‐doped ZnSe with selenium‐rich growth by low‐pressure organometallic chemical vapor deposition;Journal of Applied Physics;1994-06-15

4. Characterization of Al-doped n-type ZnSe prepared under a zinc-rich growth condition by low-pressure organometallic chemical vapor deposition;Thin Solid Films;1994-03

5. Excitonic properties of Zn1−xCdxSe/ZnSe quantum well structures grown by metalorganic vapor phase epitaxy;Journal of Electronic Materials;1993-05

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