Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina-Reference-Cited by-同舟云学术

Direct observation of electronic structure change by resistance random access memory effect in amorphous alumina

Published:2019-09 Issue:9 Volume:9 Page:095050
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kubota Masato¹,Nigo Seisuke²^ORCID,Kato Seiichi²,Amemiya Kenta³⁴

Affiliation:

1. Japan Atomic Energy Agency (JAEA), 2-4 Shirakata Tokai-mura, Naka-gun, Ibaraki 319-1195, Japan

2. International Center for Materials Nanoarchitectonics (MANA),National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3. Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan

4. Department of Materials Structure Science, School of High Energy Accelerator Science, The Graduate University for Advanced Studies (SOKENDAI), Tsukuba, Ibaraki 305-0801, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5086212

Reference31 articles.

1. Toward a Universal Memory

2. The future of universal memory

3. Towards a universal memory?

4. C. H. Lam, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 1 (2012).

5. Electric-pulse-induced reversible resistance change effect in magnetoresistive films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of local structures on amorphous alumina exhibiting resistance random-access memory function;Journal of Applied Physics;2024-07-08

2. Nonvolatile Memristive Materials and Physical Modeling for In‐Memory and In‐Sensor Computing;Small Science;2024-01-22