Influence of local structures on amorphous alumina exhibiting resistance random-access memory function

Abstract

Amorphous alumina resistance random-access memory is a promising candidate as a next-generation nonvolatile memory. It is intriguing that the nonvolatile memory function emerges in only amorphous samples, unlike crystalline samples. We studied local structures of amorphous alumina samples and Al2O3 polycrystalline using atomic pair distribution function measurements. We derived the Al–Al, O–O, and Al–O atomic distances for each sample. By comparing them, we revealed that the subtle difference in the local structure significantly influences the performance of a nonvolatile memory function.