Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3topgate insulators
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867202
Reference32 articles.
1. Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics
2. Density of States and Zero Landau Level Probed through Capacitance of Graphene
3. Influence of Disorder on Conductance in Bilayer Graphene under Perpendicular Electric Field
4. Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement
5. Tunable Stress and Controlled Thickness Modification in Graphene by Annealing
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