Selective silicon epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition using SiH4and SiH4/H2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342796
Reference26 articles.
1. SOI by CVD: Epitaxial Lateral Overgrowth (ELO) process—Review
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4. Application of selective silicon epitaxial growth for CMOS technology
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