Low-temperature solid-phase crystallization of amorphous silicon thin films deposited by rf magnetron sputtering with substrate bias
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2219136
Reference19 articles.
1. PECVD Silicon Nitride as a Gate Dielectric for Amorphous Silicon Thin Film Transistor: Process and Device Performance
2. Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements
3. Metal-induced solid-phase crystallization of hydrogenated amorphous silicon: dependence on metal type and annealing temperature
4. A model for crystal growth during metal induced lateral crystallization of amorphous silicon
5. Electrical characteristics of thin-film transistors using field-aided lateral crystallization
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