Fabrication of a Si lever structure made by double-angled etching with reactive gas cluster injection-Reference-Cited by-同舟云学术

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Fabrication of a Si lever structure made by double-angled etching with reactive gas cluster injection

Published:2017-05 Issue:18 Volume:110 Page:182105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Seki T.¹,Yamamoto H.²,Kozawa T.²,Koike K.³,Aoki T.⁴,Matsuo J.⁵

Affiliation:

1. Department of Nuclear Engineering, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan

2. Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Osaka 567-0047, Japan

3. Iwatani Corp., Amagasaki, Hyogo 661-0965, Japan

4. Academic Center for Computing and Media Studies, Kyoto University, Sakyo, Kyoto 606-8501, Japan

5. Quantum Science and Engineering Center, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4982970

Reference22 articles.

1. Developments of Plasma Etching Technology for Fabricating Semiconductor Devices

2. Study of plasma charging-induced white pixel defect increase in CMOS active pixel sensor

3. SiO2mask erosion and sidewall composition during CH4/H2reactive ion etching of InGaAsP/InP

4. Comparison of XeF2 and F‐atom reactions with Si and SiO2

5. Direct creation of three-dimensional photonic crystals by a top-down approach

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High aspect (>20) etching with reactive gas cluster injection;Japanese Journal of Applied Physics;2022-06-13

2. Gas-dynamic sources of cluster ions for solving fundamental and applied problems;Physics-Uspekhi;2021-06

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