Study of stress distribution in a cleaved Si shallow trench isolation structure using confocal micro-Raman system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3437628
Reference9 articles.
1. Measurement of Strain in Locally Oxidized Silicon using Convergent-Beam Electron Diffraction
2. Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)
3. Piezo-Raman measurements and anharmonic parameters in silicon and diamond
4. Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment
5. Effects of Cleavage on Local Cross-Sectional Stress Distribution in Trench Isolation Structure
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