Photoelectronic effects in amorphous silicon based alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93498
Reference10 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Light‐induced dangling bonds in hydrogenated amorphous silicon
3. Light‐induced radiative recombination centers in hydrogenated amorphous silicon
4. Characterized of glow-discharge deposited a-Si:H
5. Light‐induced effects in Schottky diodes on hydrogenated amorphous silicon
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1. Spatial distribution of light‐induced defects in hydrogenated amorphous silicon;Applied Physics Letters;1995-02-06
2. Systematic study of light-induced effects in hydrogenated amorphous silicon;Physical Review B;1992-06-15
3. Metal contacts on amorphous hydrogenated silicon: effects of annealing;Thin Solid Films;1992-02
4. Thermal equilibrium changes in diode structures of doped amorphous silicon;Applied Physics Letters;1989-01-16
5. Increase of Doping Efficiency During Light Exposure in P-Type Hydrogenated Amorphous Silicon;MRS Proceedings;1988-01
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