Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air
Author:
Affiliation:
1. Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA
2. PrivaTran, LLC, 1250 Capital of Texas Highway South, Bldg 3, Ste 400, Austin Texas 78746, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4900422
Reference22 articles.
1. CMOS/nano Co-design for crossbar-based molecular electronic systems
2. Complementary resistive switches for passive nanocrossbar memories
3. Characterization of external resistance effect and performance optimization in unipolar-type SiOx-based resistive switching memory
4. Memory switching properties of e-beam evaporated SiOx on N++ Si substrate
5. Study of polarity effect in SiOx-based resistive switching memory
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