Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory-Reference-Cited by-同舟云学术

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Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

Published:2018-04-04 Issue: Volume: Page:
ISSN:
Container-title:Memristor and Memristive Neural Networks
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Author:

Hsieh Cheng-Chih,Chang Yao-Feng,Chen Ying-Chen,Wu Xiaohan,Guo Meiqi,Zhou Fei,Kim Sungjun,Fowler Burt,Lin Chih-Yang,Pan Chih-Hung,Chang Ting-Chang,Lee Jack C.

Publisher

InTech

Link

http://www.intechopen.com/download/pdf/54997

Reference122 articles.

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3. Chen YY, Degraeve R, Clima S, Govoreanu B, Goux L, Fantini A, Kar GS, Pourtois G, Groeseneken G, Wouters DJ, Jurczak M. Techenical Digest. International Electron Devices Meet (IEDM); 2012. p. 482. DOI: 10.1109/TED.2012.2218607

4. Kahng D, Sze SM. Bell System Technical Journal. 1967;46:1288-1295. DOI: 10.1109/T-ED.1976.18468

5. Chang TC, Jiana FY, Chenc SC, Tsai YT. Materials Today. 2011;14:608-615. DOI: 10.1016/S1369-7021(11)70302-9

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